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NTHD4401P
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
Drain?to?Source Breakdown Voltage Tem-
V (Br)DSS
V (Br)DSS /T J
V GS = 0 V, I D = ?250 m A
?20
?23
?8.0
V
mV/ ° C
perature Coefficient
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V
T J = 25 ° C
?1.0
m A
V DS = ?16 V
T J = 85 ° C
?5.0
Gate?to?Source Leakage Current
I GSS
V DS = 0 V, V GS = " 12 V
" 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V GS(th)
V GS = V DS , I D = ?250 m A
?0.6
?0.75
?1.2
V
Gate Threshold Temperature Coefficient
V GS(th) /T J
2.65
mV/ ° C
Drain?to?Source On Resistance
R DS(on)
V GS = ?4.5 V, I D = ?2.1 A
0.130
0.155
W
V GS = ?2.5 V, I D = ?1.7 A
V GS = ?1.8 V, I D = ?1.0 A
0.200
0.34
0.240
Forward Transconductance
g FS
V DS = ?10 V, I D = ?2.1 A
5.0
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C iss
185
300
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate?to?Source Charge
C oss
C rss
Q G(TOT)
Q G(TH)
Q GS
V GS = 0 V, f = 1.0 MHz,
V DS = ?10 V
V GS = ?4.5 V, V DS = ?10 V,
I D = ?2.1 A
95
30
3.0
0.2
0.5
150
50
6.0
pF
nC
Gate?to?Drain Charge
SWITCHING CHARACTERISTICS (Note 3)
Q GD
0.9
Turn?On Delay Time
t d(on)
7.0
12
Rise Time
Turn?Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = ?4.5 V, V DD = ?16 V,
I D = ?2.1 A, R G = 2.5 W
13
33
27
25
50
40
ns
DRAIN?SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V
I S = ?2.5 A
?0.85
?1.15
V
Reverse Recovery Time
t rr
32
Charge Time
Discharge Time
Reverse Recovery Charge
t a
t b
Q RR
V GS = 0 V, dI S /dt = 90 A/ m s,
I S = ?2.1 A
10
22
15
ns
nC
2. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
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